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TISP4xxxJ3BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
R a t i n g
‘4070J3BJ
‘4080J3BJ
‘4095J3BJ
‘4115J3BJ
‘4125J3BJ
‘4145J3BJ
S y m b o l
V a l u e
±58
±65
±75
±90
±100
±120
U n i t
Repetitive peak off-state voltage
‘4165J3BJ
‘4180J3BJ
V DRM
±135
±145
V
Non-repetitive peak impulse current (see Notes 1 and 2)
2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape)
8/20 μs (IEC 61000-4-5, combination wave generator, 1.2/50 μsvoltage wave shape)
10/160 μs (TIA-968-A, 10/160 μs voltage wave shape)
‘4200J3BJ
‘4219J3BJ
‘4250J3BJ
‘4290J3BJ
‘4350J3BJ
‘4395J3BJ
±155
±180
±190
±220
±275
±320
±1000
±800
±400
4/250 μs (ITU-T K.20/21, 10/700 μs voltage waveshape, simultaneous)
5/310 μs (ITU-T K.20/21, 10/700 μs voltage wave shape, single)
5/320 μs (TIA-968-A, 9/720 μs voltage waveshape, single)
10/560 μs (TIA-968-A, 10/560 μs voltage wave shape)
10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape)
I PPSM
±370
±350
±350
±250
±200
A
Non-repetitive peak on-state current (see Notes 1 and 2)
20 ms, 50 Hz (full sine wave)
Initial rate of rise of on-sta t e c u r r e n t . L i n e a r c u r r e n t r a m p . M a x i m u m r a m p v a l u e < 5 0 A
Junction temperature
Storage temperature range
I TSM
d i T /dt
T J
T stg
50
800
-40 to +150
-65 to +150
A
A/μs
°C
°C
NOTES: 1. Initially the device must be in thermal equilibrium with T J = 25 °C.
2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its
initial conditions.
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
P a r a m e t e r
T e s t C o n d i t i o n s
M i n
T y p M a x
U n i t
I DRM
Repetitive peak
off-state current
V D = V DRM
T A = 25 °C
T A = 85 °C
±5
±10
μA
‘4070J3BJ
‘4080J3BJ
‘4095J3BJ
‘4115J3BJ
‘4125J3BJ
‘4145J3BJ
±70
±80
±95
±115
±125
±145
V (BO)
AC Breakover voltage
dv/dt = ±250 V/ms, R SOURCE = 300 Ω
‘4165J3BJ
‘4180J3BJ
±165
±180
V
‘4200J3BJ
‘4219J3BJ
‘4250J3BJ
‘4290J3BJ
‘4350J3BJ
‘4395J3BJ
±200
±219
±250
±290
±350
±395
JULY 2003 - REVISED NOVEMBER 2013
Speci?cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their speci?c applications.
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